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2N5108 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N5108 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Power Transistor 2N5108 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA 0.5 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA hFE DC Current Gain IC= 10mA; VCE= 10V 40 150 fT Current-Gain —Bandwidth Product IC= 50mA;VCE= 10V;f= 200MHz 1200 MHz COB Output Capacitance IE= 0;VCB= 28V; ftest= 1.0MHz 3.3 pF |
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