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BUX41 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BUX41
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUX41 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUX41 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUX41 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUX41
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)
·High Current Capability
·Good Linearity of hFE
APPLICATIONS
·Designed for high speed, high current, high power
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO(SUS)
Collector-Emitter Voltage
200
V
VCEX
Collector-Emitter Voltage VBE= -2.5V
250
V
VCER
Collector-Emitter Voltage RBE= 100Ω
240
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IB
B
Base Current-Continuous
3
A
PC
Collector Power Dissipation
@TC=100℃
120
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.46
℃/W
isc Website：www.iscsemi.cn


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