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BUT11AF Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BUT11AF
Description  isc Silicon NPN Power Transistor
PDF  3 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUT11AF Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUT11AF Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUT11AF Datasheet HTML 2Page - Inchange Semiconductor Company Limited BUT11AF Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT11AF
DESCRIPTION
·
·High Voltage
·High Speed Switching
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
B
Base Current
2
A
IBM
Base Current-Peak
4
A
PC
Collector Power Dissipation
@TC=25℃
40
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
3.125
K/W
isc Website：www.iscsemi.cn


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