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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2SA1516 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1516 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1516 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -180 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A B -3.0 V VBE(on) Base-Emitter On Voltage IC= -7A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -180V ; IE= 0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 55 180 hFE-2 DC Current Gain IC= -7A ; VCE= -5V 35 COB Output Capacitance IE=0 ; VCB= -10V;ftest= 1.0MHz 470 pF fT Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V 25 MHz hFE-1 Classifications R O 55-110 90-180 isc Website：www.iscsemi.cn 2 |
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