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2SA1879 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1879 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1879 DESCRIPTION Fig.1 simplified outline (ITO-220) and symbol ·With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -7 A ICM Collector current-Peak -14 A IB B Base current -1.5 A IBM Base current-Peak -2 A PT Total power dissipation TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 5.0 ℃/W |
Numéro de pièce similaire - 2SA1879 |
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Description similaire - 2SA1879 |
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