2SA877 datasheet(1/2 Pages) ISC

No de pièce	2SA877

Description	isc Silicon PNP Power Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon PNP Power Transistor

2SA877

DESCRIPTION

·High Power Dissipation-

: PC= 100W(Max.)@TC=25℃

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -80V(Min.)

APPLICATIONS

·Designed for power amplifier and general purpose

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-10

A

IB

Base Current-Continuous

-4

A

PC

Collector Power Dissipation

@TC=25℃

100

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

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