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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2SA807 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA807 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA807 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA IB=0 -60 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -1.0 mA hFE DC current gain IC=-3A ; VCE=-4V 20 fT Transition frequency IC=-0.5A ; VCE=-12V 10 MHz Switching times tr Rise time 1.2 μs tstg Storage time 1.8 μs tf Fall time VCC=-10V;IC=-3A; RL=3Ω IB1=-0.3A; IB2=50mA 0.3 μs 2 |
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