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2SA745A Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA745A Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA745A ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 B -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.5 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -1.0 mA hFE DC Current Gain IC= -3A ; VCE= -4V 30 fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 15 MHz Switching times tr Rise Time 1.2 μs tstg Storage Time 2.0 μs tf Fall Time IC= -3A ,RL= 4Ω, VCC= -12V IB1= -0.2A; IB2= 0.1A 0.55 μs isc Website:www.iscsemi.cn |
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