2SA740 datasheet(1/2 Pages) ISC

No de pièce	2SA740

Description	isc Silicon PNP Power Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SA740

DESCRIPTION

·Collector-Emitter Breakdown Voltage

: V(BR)CEO= -150V(Min)

·DC Current Gain

: hFE= 40-140@ IC= -0.5A

·Complement to Type 2SC1448

APPLICATIONS

·Power amplifier applications.

·Vertical output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-150

V

VCEO

Collector-Emitter Voltage

-150

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-1.5

A

IE

Emitter Current-Continuous

1.5

A

Total Power Dissipation

@ Ta=25℃

1.5

PC

Total Power Dissipation

@ TC=25℃

25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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