2SA636 datasheet(1/3 Pages) ISC

No de pièce	2SA636

Description	Silicon PNP Power Transistors

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA636 2SA636A

DESCRIPTION

·With TO-202 package

·Complement to type 2SC1098/1098A

Fig.1 simplified outline (TO-202) and symbol

·High breakdown voltage

·High transition frequency

APPLICATIONS

·For audio frequency power amplifier and

low speed switching applications

PINNING(see Fig.2)

DESCRIPTION

1

Base

2

Collector

3

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-70

V

2SA636

-45

VCEO

Collector-emitter voltage

2SA636A

Open base

-60

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-3

A

ICM

Collector current-peak

-5

A

IB

B

Base current

-0.6

A

TC=25℃

10

PT

Total power dissipation

Ta=25℃

1.2

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

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