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BU109 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BU109
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU109 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU109
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 150 V(Min)
APPLICATIONS
·Designed for horizontal deflection output stage of TVs and
CRTs applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
330
V
VCEV
Collector-Emitter Voltage- VBE= -1.5V
330
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak(Repetitive)
10
A
ICM
Collector Current-Peak(t= 10ms)
15
A
IB
B
Base Current
4
A
PC
Collector Power Dissipation@TC=25℃
60
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.08
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
70
℃/W
isc Website：www.iscsemi.cn


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