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BD941F Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce BD941F
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD941F Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD933F/935F/937F/939F/941F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BD933F
45
BD935F
60
BD937F
80
BD939F
100
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD941F
IC= 100mA ; IB= 0
120
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
B
0.6
V
VBE(on)
Base-Emitter On Voltage
IC= 1A; VCE= 2V
1.3
V
ICBO
Collector Cutoff Current
VCB= VCBOmax; IE= 0
VCB= VCBOmax; IE= 0,TJ=150℃
0.1
3.0
mA
ICEO
Collector Cutoff Current
VCE= VCEOmax; IB= 0
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 150mA ; VCE= 2V
40
250
hFE-2
DC Current Gain
IC= 1A ; VCE= 2V
25
fT
Current-Gain—Bandwidth Product
IC= 250mA ; VCE= 10V
3
MHz
Switching Times
ton
Turn-On Time
0.4
1.0
μs
toff
Turn-Off Time
IC= 1.0A; IB1= -IB2= 0.1A
1.5
3.0
μs
isc Website：www.iscsemi.cn
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