TIP100 datasheet(1/2 Pages) ISC

No de pièce	TIP100

Description	isc Silicon NPN Darlington Power Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

TIP100

DESCRIPTION

·High DC Current Gain-

: hFE = 1000(Min)@ IC= 3A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 60V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = 2.0V(Max)@ IC= 3A

= 2.5V(Max)@ IC= 8A

·Complement to Type TIP105

APPLICATIONS

·Designed for general-purpose amplifier and low-speed

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

15

A

IB

B

Base Current- Continuous

1

A

Collector Power Dissipation

@TC=25℃

80

PC

Collector Power Dissipation

@Ta=25℃

2

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.56

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

62.5

℃/W

isc Website：www.iscsemi.cn

Numéro de pièce similaire - TIP100

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