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BU1706AX Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BU1706AX
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU1706AX Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU1706AX
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Designed for use in high frequency electronic lighting
ballast applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCESM
Collector-Emitter Voltage
VBE= 0
1750
V
VCEO
Collector-Emitter Voltage
750
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
B
Base Current-Continuous
3
A
IBM
Base Current-peak
5
A
PC
Collector Power Dissipation
@TC=25℃
32
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-40~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
4.0
℃/W
isc Website：www.iscsemi.cn


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