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BAS285 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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BAS285 Fiches technique(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() BAS285 Vishay Telefunken Rev. 3, 01-Apr-99 2 (4) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85501 Characteristics (Tj = 25_C unless otherwise specified) 0 20 40 60 80 100 120 140 160 180 200 25 50 75 100 125 150 Tj – Junction Temperature ( °C ) 15822 VR = 30 V 540K/W PR–Limit @100%VR PR–Limit @80%VR RthJA= Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 1 10 100 1000 25 50 75 100 125 150 1 10 100 1000 25 50 75 100 125 150 Tj – Junction Temperature ( °C ) 15823 VR = VRRM Figure 2. Reverse Current vs. Junction Temperature 0 0.5 1.0 1.5 VF – Forward Voltage ( V ) 15824 Tj =25°C Tj = 150°C 0.1 1 10 100 1000 Figure 3. Forward Current vs. Forward Voltage 0 1 2 3 4 5 6 7 8 9 10 0.1 1.0 10.0 100.0 VR – Reverse Voltage ( V ) 15825 f=1MHz Figure 4. Diode Capacitance vs. Reverse Voltage |
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