2SC3076 datasheet(1/2 Pages) KEXIN

No de pièce	2SC3076

Description	Silicon NPN Epitaxial

PDF	2 Pages

Scroll/Zoom	100%

Fabricant	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Site Internet	http://www.kexin.com.cn/index.asp

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1 / 2 page

SMD Type

Transistors

1

2.3

0.60+0.1

-0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4.60+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

www.kexin.com.cn

Silicon NPN Epitaxial

2SC3076

Features

Low Collectror Saturation Voltage:VCE(sat)=0.5V(Max.)(IC=1A)

Excellent Switching Time :tstg=1.0ìs(Typ.)

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

5V

Collector current

IC

2A

Base Current

IB

1A

Collector power dissipation

Ta=25

PC

1.0

A

TC=25

PC

10

W

Junction temperature

Tj

150

Storage temperature

Tstg

-55to150

Numéro de pièce similaire - 2SC3076

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	2SC3076	181Kb / 4P	TRANSISTOR (POWER AMPLIFIER, SWITCING APPLICATIONS)
	2SC3076	176Kb / 5P	Power Amplifier Applications Power Switching Applications
	2SC3076	169Kb / 5P	Power Amplifier Applications Power Switching Applications
	2SC3076	1Mb / 73P	Bipolar Small-Signal Transistors
Inchange Semiconductor ...	2SC3076	298Kb / 2P	Silicon NPN Power Transistor

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2SC3076 Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

2SC3076 Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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