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IRF820-252 Fiches technique(PDF) 2 Page - Suntac Electronic Corp.

No de pièce IRF820-252
Description  POWER MOSFET
PDF  5 Pages
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Fabricant  SUNTAC [Suntac Electronic Corp.]
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Logo SUNTAC - Suntac Electronic Corp.

IRF820-252 Fiches technique(HTML) 2 Page - Suntac Electronic Corp.

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IRF820
POWER MOSFET
Page 2
ORDERING INFORMATION
Part Number
Package
IRF820-251............................................TO-251
..................IRF820-252............................................TO-252
..................IRF820-220............................................TO-220
..................IRF820-220FP
TO-220 Full Package
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25
.
IRF820
Characteristic
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250
A)
V(BR)DSS
600
V
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125
)
IDSS
0.1
1.0
mA
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
IGSSR
100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250
A)
VGS(th)
2.0
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.2A) *
RDS(on)
4.4
Forward Transconductance (VDS
50 V, ID = 1.0A) *
gFS
1.4
mhos
Input Capacitance
Ciss
435
pF
Output Capacitance
Coss
56
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Crss
9.2
pF
Turn-On Delay Time
td(on)
12
ns
Rise Time
tr
21
ns
Turn-Off Delay Time
td(off)
30
ns
Fall Time
(VDD = 300 V, ID = 2.0 A,
VGS = 10 V,
RG = 18 ) *
tf
24
ns
Total Gate Charge
Qg
13
22
nC
Gate-Source Charge
Qgs
2.0
nC
Gate-Drain Charge
(VDS = 400 V, ID = 2.0 A,
VGS = 10 V)*
Qgd
6.0
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
VSD
1.5
V
Forward Turn-On Time
ton
**
ns
Reverse Recovery Time
(IS = 2.0 A, VGS = 0 V,
dIS/dt = 100A/µs)
trr
340
ns
* Pulse Test: Pulse Width
300µs, Duty Cycle
2%
** Negligible, Dominated by circuit inductance



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