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WS57C45 Fiches technique(PDF) 8 Page - STMicroelectronics

No de pièce WS57C45
Description  HIGH-SPEED 2K x 8 REGISTERED CMOS PROM/RPROM
PDF  9 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

WS57C45 Fiches technique(HTML) 8 Page - STMicroelectronics

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WS57C45
2-28
SYMBOLS
PARAMETER
MIN
MAX
UNITS
ILI
Input Leakage Current
–10
10
µA
(VIN = VCC or Gnd)
IPP
VPP Supply Current During
60
mA
Programming Pulse
ICC
VCC Supply Current
25
mA
VIL
Input Low Voltage
–0.1
0.8
V
VIH
Input High Voltage
2.0
VCC + 0.3
V
VOL
Output Low Voltage During Verify
0.45
V
(IOL = 16 mA)
VOH
Output High Voltage During Verify
2.4
V
(IOH = –4 mA)
SYMBOLS
PARAMETER
MIN
MAX
UNITS
tPW
Programming Pulse Width
0.1
10
ms
tAS
Address Setup Time
1.0
µs
tDS
Data Setup Time
1.0
µs
tAH
Address Hold Time
1.0
µs
tDH
Data Hold Time
1.0
µs
tR, tF
VPP Rise and Fall Time
1.0
µs
tVD
Delay to VFY
1.0
µs
tVP
VFY Pulse Width
2.0
µs
tDV
VFY Data Valid
1.0
µs
tDZ
VFY HIGH to High Z
1.0
µs
NOTE: 8. VPP must not be greater than 14 volts including overshoot.
AC CHARACTERISTICS (T
A = 25 ± 5°C, VCC = 5.6 V ± 0.25 V, VPP = 13.5 ± 0.5 V)
PROGRAMMING INFORMATION
DC CHARACTERISTICS (T
A = 25 ± 5°C, VCC = 5.6 V ± 0.25 V, VPP = 13.5 ± 0.5 V)



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