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VNB20N07 Fiches technique(PDF) 1 Page - STMicroelectronics |
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VNB20N07 Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() VNP20N07FI VNB20N07/VNV20N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET June 1998 BLOCK DIAGRAM ( ∗) TYPE Vclamp RDS( on) Ilim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0. 05 Ω 0.05 Ω 0. 05 Ω 20 A 20 A 20 A s LINEAR CURRENT LIMITATION s THERMAL SHUT DOWN s SHORT CIRCUIT PROTECTION s INTEGRATED CLAMP s LOW CURRENT DRAWN FROM INPUT PIN s DIAGNOSTIC FEEDBACK THROUGH INPUT PIN s ESD PROTECTION s DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) s COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNP20N07FI, VNB20N07 and VNV20N07 are monolithic devices made using STMicroelectronics VlPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. 1 10 PowerSO-10 1 2 3 1 3 D2PAK TO-263 ISOWATT220 ( ∗) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB ® 1/13 |
Numéro de pièce similaire - VNB20N07 |
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Description similaire - VNB20N07 |
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