B40C800DM thru B380C800DM

Vishay General Semiconductor

Document Number: 88533

Revision: 29-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

Figure 4. Typical Forward Characteristics Per Diode

0

10

100

0

10

20

30

40

50

Number of Cycles at 50 Hz

T

10 ms Single Sine-Wave

1.0 Cycle

0.4

0.8

1.2

10

1

0.1

0.01

0.6

1.0

1.4

T

Pulse Width = 300 µs

1 % Duty Cycle

Instantaneous Forward Voltage (V)

Figure 5. Typical Reverse Leakage Characteristics Per Diode

Figure 6. Typical Junction Capacitance Per Diode

0

20

40

60

80

100

0.01

0.1

1

10

Percent of Rated Peak Reverse Voltage (%)

T

T

1

10

100

1

10

100

T

f = 1.0 MHz

V

Reverse Voltage (V)

Case Style DFM

0.255 (6.5)

0.245 (6.2)

0.315 (8.00)

0.285 (7.24)

0.013 (0.33)

0.0086 (0.22)

0.350 (8.9)

0.300 (7.6)

0.075 (1.90)

0.055 (1.39)

0.205 (5.2)

0.195 (5.0)

0.080 (2.03)

0.050 (1.27)

0.185 (4.69)

0.150 (3.81)

0.335 (8.51)

0.320 (8.12)

0.130 (3.30)

0.120 (3.05)

0.045 (1.14)

0.035 (0.89)

0.023 (0.58)

0.018 (0.46)