TSDF1205 datasheet(2/7 Pages) VISHAY

2 / 7 page

www.vishay.com

Document Number 85065

Rev. 1.7, 08-Sep-08

TSDF1205 / 1205R / 1205W / 1205RW

Vishay Semiconductors

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Maximum Thermal Resistance

1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu

Electrical DC Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Collector-base voltage

VCBO

Collector-emitter voltage

VCEO

Emitter-base voltage

VEBO

Collector current

Total power dissipation

Tamb ≤ 132 °C

Ptot

Junction temperature

150

°C

Storage temperature range

Tstg

- 65 to + 150

°C

Parameter

Test condition

Symbol

Value

Unit

Junction to ambient air

RthJA

450

K/W

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector-emitter cut-off current

VCE = 12 V, VBE = 0

ICES

100

µA

Collector-base cut-off current

VCB = 10 V, IE = 0

ICBO

100

Emitter-base cut-off current

VEB = 1 V, IC = 0

IEBO

2µA

Collector-emitter breakdown

voltage

IC = 1 mA, IB = 0

V(BR)CEO

Collector-emitter saturation

voltage

IC = 5 mA, IB = 0.5 mA

VCEsat

0.1

0.5

DC forward current transfer ratio VCE = 2 V, IC = 2 mA

hFE

120

250

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