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STP90N4F3 Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STP90N4F3
Description  N-channel 40 V, 5.4 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET??Power MOSFET
PDF  16 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP90N4F3 Fiches technique(HTML) 5 Page - STMicroelectronics

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STD90N4F3 - STI90N4F3 - STP90N4F3 - STU90N4F3
Electrical characteristics
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Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=20 V, ID= 40 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
15
50
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=20 V, ID= 40 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
40
15
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
80
320
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD=80 A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80 A,
di/dt = 100 A/µs,
VDD=30 V, Tj=150°C
(see Figure 15)
45
60
2.8
ns
nC
A



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