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STW6NB90 Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STW6NB90
Description  N - CHANNEL 900V - 1.7ohm - 6.3A - TO-247 PowerMESH MOSFET
PDF  5 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW6NB90 Fiches technique(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.78
30
0.1
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
6.3
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25
oC, I
D = IAR, VDD = 50 V)
700
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250
µA
VGS = 0
900
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating
Tc = 100
oC
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
VDS = VGS
ID = 250
µA
34
5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V
ID =3 A
1.7
2
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
6.3
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
∗)
Forward
Transconductance
VDS > ID(on) x RDS(on)max
ID = 3 A
1.5
6
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
f = 1 MHz
VGS = 0
1400
160
18
pF
pF
pF
STW6NB90
2/5



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