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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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M63155FP Fiches technique(PDF) 13 Page - Renesas Technology Corp |
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M63155FP Fiches technique(HTML) 13 Page - Renesas Technology Corp |
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13 / 41 page  M63155FP Rev.1.0, Sep.16.2003, page 13 of 40 Electrical characteristics (Unless otherwise noted Ta=25°C, VM=12V, VCC1=VCC2=5V) PWM Vout(*Note2) 50% 50% 0V 5V 90% 10% VA(*Note3) 0V Ton Tr Toff Tf Fig.3 Gate Drive Output Time Characteristics Definition * Note2 : Vout is the external Nch MOS FET 's gate-source voltage. The definition is, UT-U, VT-V, WT-W, and U=V=W=VM=12V, Capacitor Load CL=1200pF. UB-RS, VB-RS, WB-RS, and RS=0V, Capacitor Load CL=1200pF. * Note3 : VA is the power supply voltage of the gate drive output. The definition is, VGT-VM=10.8V for UT-U, VT- V, WT-W. VGB=12.2V for UB-RS, VB-RS, WB-RS. * Note4 : The waveform above-mentioned is one of the switching timing, because an gate drive output state is due to Hall sensor Amp. inputs. Please refer to the "Hall Signal Inputs and Motor Outputs Timing Diagram". |
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