STH13NB60 datasheet(1/9 Pages) STMICROELECTRONICS

No de pièce	STH13NB60

Description	N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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STW13NB60

STH13NB60FI

N - CHANNEL 600V - 0.48

Ω - 13A - TO-247/ISOWATT218

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.48

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

January 2000

TO-247

ISOWATT218

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

STW 13NB60

STH13NB60FP

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

600

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC13

8.6

A

ID

Drain Current (continuous) at Tc =100

oC8.2

5.4

A

IDM (

•)

Drain Current (pulsed)

52

A

Ptot

T otal Dissipation at Tc =25

oC

190

80

W

Derating Factor

1.52

0.64

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

4

V/ns

VISO

I nsulat ion W ithstand Voltage (DC)



2000

V

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 13 A, di/dt ≤ 200 Α/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST W13NB60

ST H13NB60FI

600 V

<0.54

Ω

<0.54

Ω

13 A

8.6 A

1

2

3

1

2

3

1/9

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Description similaire - STH13NB60

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STP13NK60Z	657Kb / 14P	N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET Feb-2003
	STW10NB60	93Kb / 8P	N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET Oct-1998
	STW10NC60	337Kb / 9P	N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET Feb-2002
	STW12NB60	250Kb / 8P	N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?줚I MOSFET May-2001
	STW12NC60	86Kb / 8P	N-CHANNEL 600V - 0.48ohm - 12A TO-247 PowerMeshII MOSFET Jun-2000
	STW15NB50	110Kb / 9P	N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET Jun-1998
	STW16NB60	252Kb / 8P	N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMesh™ MOSFET Apr-2003
	STW18NB40	142Kb / 7P	N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET Jun-2002
	STW8NB90	311Kb / 9P	N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET Jul-2001
	STGF20NB60S	293Kb / 10P	N-CHANNEL 13A - 600V TO-220FP PowerMESH IGBT 17-Dec-2004

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STH13NB60 Fiches technique(PDF) 1 Page - STMicroelectronics

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