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AP9971GD Fiches technique(PDF) 4 Page - Advanced Power Electronics Corp.

No de pièce AP9971GD
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  5 Pages
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Fabricant  A-POWER [Advanced Power Electronics Corp.]
Site Internet  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP9971GD Fiches technique(HTML) 4 Page - Advanced Power Electronics Corp.

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Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP9971GD
10
100
1000
10000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
35
40
Q G , Total Gate Charge (nC)
V DS =48V
V DS =38V
V DS =30V
I D =5A
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS
QGD
QG
Charge
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
t
T
0.02
0.01
0.05
0.1
0.2
Duty foctor=0.5
Single Pulse
Rthja=90℃/W
0.01
0.1
1
10
100
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
T A =25
o C
Single Pulse
1s
1ms
10ms
100ms
DC



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