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FX3ASJ-3 Fiches technique(PDF) 3 Page - Renesas Technology Corp |
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FX3ASJ-3 Fiches technique(HTML) 3 Page - Renesas Technology Corp |
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3 / 7 page ![]() FX3ASJ-3 Rev.2.00 Aug 07, 2006 page 3 of 6 Performance Curves Power Dissipation Derating Curve Case Temperature Tc (°C) Maximum Safe Operating Area Drain-Source Voltage VDS (V) Output Characteristics (Typical) Drain-Source Voltage VDS (V) Output Characteristics (Typical) Drain-Source Voltage VDS (V) On-State Voltage vs. Gate-Source Voltage (Typical) Gate-Source Voltage VGS (V) On-State Resistance vs. Drain Current (Typical) Drain Current ID (A) 0 10 20 30 40 50 0 200 50 100 150 –2 –3 –10–1 –5 –7 –100 –2 –3 –5 –7 –101 –2 –3 –5 –7 –101 –2 –102 –3 –5 –7 –2 –103 –3 –5 –7 –2 –2 –3 –5 –7 –2 0 –2 –4 –6 –8 –10 0 –4 –8 –12 –16 –20 PD = 30W VGS = –10V –4V –3V –5V –6V 0 –1.0 –2.0 –3.0 –4.0 –5.0 0 –2–4–6–8 –10 –6V –4V PD = 30W VGS =–10V –3V –2.5V –5V 0 0.4 0.8 1.2 1.6 2.0 –10–1 –100 –2 –3 –5 –7 –101 –2 –3 –5 –7 –10V VGS = –4V 0 –4 –8 –12 –16 –20 0–2 –4 –6 –8 –10 ID = –6A –1A –3A Tc = 25 °C Pulse Test Tc = 25 °C Single Pulse Tc = 25 °C Pulse Test Tc = 25 °C Pulse Test Tc = 25 °C Pulse Test 100 µs 1ms DC |
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