Rev.1.00, Aug.20.2004, page 1 of 6

FS10AS-06

High-Speed Switching Use

Nch Power MOS FET

REJ03G0240-0100

Rev.1.00

Aug.20.2004

Features

• Drive voltage : 10 V

• V

• r

Ω

• I

• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns

Outline

MP-3A

1

1

3

3

2, 4

2

4

1. Gate

2. Drain

3. Source

4. Drain

Applications

Motor control, lamp control, solenoid control, DC-DC converters, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Symbol

Ratings

Unit

Conditions

Drain-source voltage

60

V

Gate-source voltage

±20

V

Drain current

10

A

Drain current (Pulsed)

40

A

Avalanche current (Pulsed)

10

A

L = 100

µH

Source current

10

A

Source current (Pulsed)

40

A

Maximum power dissipation

30

W

Channel temperature

Tch

– 55 to +150

°C

Storage temperature

Tstg

– 55 to +150

°C

Mass

—

0.32

g

Typical value