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FS10AS-2 Fiches technique(PDF) 3 Page - Renesas Technology Corp

No de pièce FS10AS-2
Description  High-Speed Switching Use Nch Power MOS FET
PDF  7 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

FS10AS-2 Fiches technique(HTML) 3 Page - Renesas Technology Corp

  FS10AS-2 Datasheet HTML 1Page - Renesas Technology Corp FS10AS-2 Datasheet HTML 2Page - Renesas Technology Corp FS10AS-2 Datasheet HTML 3Page - Renesas Technology Corp FS10AS-2 Datasheet HTML 4Page - Renesas Technology Corp FS10AS-2 Datasheet HTML 5Page - Renesas Technology Corp FS10AS-2 Datasheet HTML 6Page - Renesas Technology Corp FS10AS-2 Datasheet HTML 7Page - Renesas Technology Corp  
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FS10AS-2
Rev.2.00
Nov 21, 2006
page 3 of 6
Performance Curves
Drain Power Dissipation Derating Curve
Case Temperature Tc (°C)
Maximum Safe Operating Area
Drain-Source Voltage VDS (V)
0
10
20
30
40
50
0
200
50
100
150
10–1
5
7
100
2
3
5
7
101
2
3
2
3
5
7
2100
35 7
2
101
35 7
2
102
35 7
5
2
tw = 10
µs
Tc = 25°C
Single Pulse
100
µs
10ms
1ms
DC
Output Characteristics (Typical)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
Gate-Source Voltage VGS (V)
On-State Resistance vs.
Drain Current (Typical)
Drain Current ID (A)
0
4
8
12
16
20
0
1.0
2.0
3.0
4.0
5.0
PD = 30W
Tc = 25°C
Pulse Test
6V
7V
5V
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
Tc = 25°C
Pulse Test
6V
5V
VGS = 20V
10V
VGS = 20V
10V
7V
0
1.0
2.0
3.0
4.0
5.0
04
812
16
20
ID = 15A
Tc = 25°C
Pulse Test
10A
5A
0
0.1
0.2
0.3
0.4
0.5
10–1 2100
35 7
2
101
35 7
23
102
57
VGS = 10V
Tc = 25°C
Pulse Test
20V



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