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FS5AS-06 Fiches technique(PDF) 4 Page - Renesas Technology Corp |
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FS5AS-06 Fiches technique(HTML) 4 Page - Renesas Technology Corp |
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4 / 7 page ![]() FS5AS-06 Rev.2.00 Aug 07, 2006 page 4 of 6 Transfer Characteristics (Typical) Gate-Source Voltage VGS (V) Forward Transfer Admittance vs. Drain Current (Typical) Drain Current ID (A) Switching Characteristics (Typical) Drain-Source Voltage VDS (V) Capacitance vs. Drain-Source Voltage (Typical) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Gate Charge Qg (nC) Source-Drain Diode Forward Characteristics (Typical) Source-Drain Voltage VSD (V) 0 2 4 6 8 10 048 12 16 20 100 101 23 4 5 7 102 23 4 5 7 10–1 100 2 3 4 5 7 101 2 3 4 5 7 Tc = 25 °C 75 °C 125 °C 102 3 5 7 103 2 3 5 7 104 2 3 2 5 7 100 2101 35 7 35 7 2 102 35 7 2 3 2 Ciss Coss Crss 10–1 100 23 4 5 7 101 23 4 5 7 101 2 3 4 5 7 102 2 3 4 5 7 2 td(off) td(on) tf tr 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0 Tc = 125 °C 75 °C 25 °C 0 4 8 12 16 20 0 4 8 121620 VDS = 10V 20V 40V Tc = 25 °C VDS = 10V Pulse Test VDS = 5V Pulse Test Tch = 25 °C VDD = 30V VGS = 10V RGEN = RGS = 50 Ω Tch = 25 °C f = 1MHz VGS = 0V Tch = 25 °C ID = 5A VGS = 0V Pulse Test |
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