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STTH102 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STTH102
Description  HIGH EFFICIENCY ULTRAFAST DIODE
PDF  7 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH102 Fiches technique(HTML) 3 Page - STMicroelectronics

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STTH102
Characteristics
3/7
Figure 3.
Average forward current versus
ambient temperature (
δ = 0.5) (SMA)
Figure 4.
Average forward current versus
ambient temperature (
δ = 0.5)
(DO-41)
I
(A)
F(AV)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
175
R
=120°C/W
th(j-a)
R=R
th(j-a)
th(j-I)
T
δ=tp/T
tp
T
(°C)
amb
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
175
I
(A)
F(AV)
R
=110°C/W
th(j-a)
R=R
th(j-a)
th(j-I)
T
δ=tp/T
tp
T
(°C)
amb
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (epoxy
printed circuit board, e(Cu) = 35 µm,
recommended pad layout) (SMA)
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DO-41)
Z/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
T
δ=tp/T
tp
t (s)
p
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Z/R
th(j-c)
th(j-c)
T
δ=tp/T
tp
t (s)
p
Figure 7.
Forward voltage drop versus
forward current
Figure 8.
Junction capacitance versus
reverse voltage applied
(typical values)
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
I
(A)
FM
V
(V)
FM
T =125°C
(maximum values)
j
T =125°C
(typical values)
j
T =25°C
(maximum values)
j
1
10
100
1
10
100
1000
C(pF)
F=1MHz
V
=30mV
T =25°C
OSC
RMS
j
V (V)
R



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