STS9NF3LL datasheet(1/8 Pages) STMICROELECTRONICS

No de pièce	STS9NF3LL

Description	N-CHANNEL 30V - 0.016 ohm - 9A SO-8 LOW GATE CHARGE STripFET??II POWER MOSFET

PDF	8 Pages

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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November 2001

.

STS9NF3LL

N-CHANNEL 30V - 0.016

Ω - 9A SO-8

LOW GATE CHARGE STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.016 Ω

s

OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power MOSFET is the second

generation of STMicroelectronis unique "Single Feature

Size™" strip-based process. The resulting transistor

shows the best trade-off between on-resistance and gate

charge. When used as high and low side in buck

regulators, it gives the best performance in terms of both

conduction and switching losses. This is extremely

important for motherboards where fast switching and

high efficiency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC

CONVERTERS FOR MOBILE PCS

TYPE

VDSS

RDS(on)

ID

STS9NF3LL

30 V

<0.019

Ω

9 A

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

30

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

30

V

VGS

Gate- source Voltage

± 16

V

ID

Drain Current (continuos) at TC = 25°C

9A

ID

Drain Current (continuos) at TC = 100°C

5.6

A

IDM(•)

Drain Current (pulsed)

36

A

Ptot

Total Dissipation at TC = 25°C

2.5

W

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