STS4DPF30L datasheet(1/6 Pages) STMICROELECTRONICS

No de pièce	STS4DPF30L

Description	DUAL P-CHANNEL 30V - 0.07 ohm - 4A SO-8 STripFET™ POWER MOSFET

PDF	6 Pages

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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PRELIMINARY DATA

April 2002

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

STS4DPF30L

DUAL P-CHANNEL 30V - 0.07

Ω - 4A SO-8

STripFET™ POWER MOSFET

s

TYPICAL RDS(on) = 0.07 Ω

s

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

s

LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based

process.

The

resulting

transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

s

POWER MANAGEMENT IN CELLULAR

PHONES

s

DC-DC CONVERTER

TYPE

VDSS

RDS(on)

ID

STS4DPF30L

30 V

<0.08

Ω

4 A

SO-8

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

Note: For the P-CHANNEL MOSFET actual polarity of voltages and

current has to be reversed

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

30

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

30

V

VGS

Gate- source Voltage

± 16

V

ID

Drain Current (continuous) at TC = 25°C Single Operation

Drain Current (continuous) at TC = 100°C Single Operation

4

2.5

A

IDM(•)

Drain Current (pulsed)

16

A

Ptot

Total Dissipation at TC = 25°C Dual Operation

Total Dissipation at TC = 25°C Single Operation

2.0

1.6

W

INTERNAL SCHEMATIC DIAGRAM

Numéro de pièce similaire - STS4DPF30L

Fabricant	No de pièce	Fiches technique	Description
VBsemi Electronics Co.,...	STS4DPF30L	1Mb / 9P	Dual P-Channel 30-V (D-S) MOSFET
SHENZHEN DOINGTER SEMIC...	STS4DPF30L	1Mb / 5P	Dual P-Channel MOSFET uses advanced trench technology

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Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STS3C3F30L	413Kb / 10P	N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ohm - 3A SO-8 STripFET™ II POWER MOSFET Feb-2002
	STS3DPF20V	259Kb / 8P	DUAL P-CHANNEL 20V - 0.090 ohm - 3A SO-8 STripFET™ POWER MOSFET Jun-2002
	STS4DNF30L	135Kb / 6P	DUAL N-CHANNEL 30V - 0.039ohm - 4A SO-8 STripFET™ POWER MOSFET Aug-2002
	STS4DPF20L	249Kb / 8P	DUAL P-CHANNEL 20V - 0.07 ohm - 4A SO-8 STripFET™ POWER MOSFET Feb-2002
	STS4DPFS30L	264Kb / 8P	P-CHANNEL 30V - 0.07ohm - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER Oct-2000
	STS4NF100	274Kb / 8P	N-CHANNEL 100V - 0.065 ohm - 4A SO-8 STripFET™ II POWER MOSFET Jul-2001
	STS5PF30L	45Kb / 6P	P - CHANNEL 30V - 0.053ohm - 5A SO-8 STripFET POWER MOSFET Nov-1999
	STS6PF30L	295Kb / 8P	P-CHANNEL 30V - 0.027 ohm - 6A SO-8 STripFET™ POWER MOSFET May-2003
	STS7C4F30L	403Kb / 10P	N-CHANNEL 30V - 0.018 ohm - 7A SO-8 P-CHANNEL 30V - 0.070 ohm - 4A SO-8 STripFET??POWER MOSFET Jun-2001
	STS4DNF30L	330Kb / 12P	Dual N-channel 30V - 0.039ohm - 4A SO-8 STripFET TM Power MOSFET 15-Nov-2006

More results

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