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HD151TS307ARP Fiches technique(PDF) 3 Page - Renesas Technology Corp |
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HD151TS307ARP Fiches technique(HTML) 3 Page - Renesas Technology Corp |
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3 / 9 page ![]() HD151TS307ARP Rev.4.00 Jul. 08, 2004 page 3 of 8 Absolute Maximum Ratings Item Symbol Ratings Unit Conditions Supply voltage VDD –0.5 to 4.6 V Input voltage VI –0.5 to 4.6 V Output voltage *1 VO –0.5 to VDD+0.5 V Input clamp current IIK –50 mA VI < 0 Output clamp current IOK –50 mA VO < 0 Continuous output current IO ±50 mA VO = 0 to VDD Maximum power dissipation at Ta = 55°C (in still air) 0.7 W Storage temperature Tstg –65 to +150 °C Notes: Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 1. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed. Recommended Operating Conditions Item Symbol Min Typ Max Unit Conditions Supply voltage VDD 3.135 3.3 3.465 V DC input signal voltage –0.3 — VDD+0.3 V High level input voltage VIH 2.0 — VDD+0.3 V Low level input voltage VIL –0.3 — 0.8 V Operating temperature Ta 0— 70 °C Input clock duty cycle 45 50 55 % DC Electrical Characteristics Ta = 0 to 70°C, VDD = 3.3 V±5% Item Symbol Min Typ Max Unit Test Conditions Input low voltage VIL —— 0.8 V Input high voltage VIH 2.0 — — V —— ±10 VI = 0 V or 3.465 V, VDD = 3.465 V, XIN pin Input current II —— ±100 µA VI = 0 V or 3.465 V, VDD = 3.465 V, SEL0, SEL1 pins Input slew rate 1 — 4 V / ns 20% – 80% Input capacitance CI — — 4 pF SEL0, SEL1 Operating current — 7 — mA XIN = 24 MHz, CL = 0 pF, VDD = 3.3 V |
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