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STPS5H100B Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STPS5H100B
Description  HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
PDF  5 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS5H100B Fiches technique(HTML) 2 Page - STMicroelectronics

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Table 4: Thermal Parameters
Table 5: Static Electrical Characteristics
Pulse test:
* tp = 5 ms,
δ < 2%
** tp = 380 µs,
δ < 2%
To evaluate the conduction losses use the following equation: P = 0.51 x IF(AV) + 0.02 IF
2
(RMS)
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
2.5
°C/W
Symbol
Parameter
Tests conditions
Min.
Typ
Max.
Unit
IR *
Reverse leakage current
Tj = 25°C
VR = VRRM
3.5
µA
Tj = 125°C
1.3
4.5
mA
VF **
Forward voltage drop
Tj = 25°C
IF = 5A
0.73
V
Tj = 125°C
0.57
0.61
Tj = 25°C
IF = 10A
0.85
Tj = 125°C
0.66
0.71
Figure 1: Average forward power dissipation
versus average forward current
Figure 2: Average forward current versus
ambient temperature (
δ = 0.5)
Figure
3:
Normalized
avalanche
power
derating versus pulse duration
Figure
4:
Normalized
avalanche
power
derating versus junction temperature
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IF(av) (A)
PF(av)(W)
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
T
δ=tp/T
tp
0
20
40
60
80
100
120
140
160
180
0
1
2
3
4
5
6
Tamb(°C)
IF(av)(A)
Rth(j-a)=80°C/W
Rth(j-a)=Rth(j-c)
T
δ=tp/T
tp
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (µs)
p
P(t )
P
(1µs)
ARM p
ARM
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (°C)
j
P(t )
P
(25°C)
ARM p
ARM



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