MD2103DFP datasheet(3/9 Pages) STMICROELECTRONICS

No de pièce	MD2103DFP

Description	High voltage NPN power transistor for standard definition CRT display

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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MD2103DFP

Electrical characteristics

3/9

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note:

Note (1) Pulsed duration = 300

µs, duty cycle ≤1.5%

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE =0)

VCE = 1500V

VCE = 1500V TC = 125°C

0.2

IEBO

Emitter cut-off current

(IC =0)

VEB = 5V

125

V(BR)EBO

Emitter-base brakdown

voltage (IC = 0)

IE = 700mA

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 3A

_ _ IB =0.75A

1.8

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 3A

_ _ IB =0.75A

1.5

hFE

(1)

DC current gain

IC = 1A

VCE =5V

IC = 3A

VCE =1V

IC = 3A

VCE =5V

6.5

9.5

Inductive load

Storage time

Fall time

IC =3A

fh =16kHz

IB(on) =0.5A VBE(off) =-2.7V

LBB(off) =6.3µH

(see Figure 12)

3.8

0.25

µs

Diode forward voltage

IF = 3A

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