STPS2H100A datasheet(3/6 Pages) STMICROELECTRONICS

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1E-3

1E-2

1E-1

1E+0

t(s)

IM(A)

Ta=50°C

Ta=100°C

Ta=150°C

δ=0.5

Fig. 3: Non repetitive surge peak forward current

versus overload duration (maximum

values)

(SMB).

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

tp(s)

Zth(j-a)/Rth(j-a)

Printed circuit board: S(Cu)=1.5cm² (e=35µm)

δ=tp/T

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

Fig. 5: Relative variation of thermal impedance

junction to ambient versus pulse duration (SMB).

102030405060708090

100

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

VR(V)

IR(µA)

Tj=125°C

Tj=75°C

Tj=25°C

Tj=100°C

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

100

200

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values).

1E-3

1E-2

1E-1

1E+0

t(s)

IM(A)

Ta=50°C

Ta=100°C

Ta=150°C

δ=0.5

Fig. 4: Non repetitive surge peak forward current

versus overload duration (maximum

values)

(SMA).

1E-2

1E-1

1E+0

1E+1

1E+2

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

tp(s)

Zth(j-a)/Rth(j-a)

Printed circuit board: S(Cu)=1.5cm² (e=35µm)

δ=tp/T

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

Fig. 6: Relative variation of thermal impedance

junction to ambient versus pulse duration (SMA).

STPS2H100A/U

3/6

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