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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2ST5949 Fiches technique(PDF) 1 Page - STMicroelectronics |
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2ST5949 Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  July 2008 Rev 3 1/8 8 2ST5949 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Fast-switching speed ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Applications ■ Audio power amplifier Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Figure 1. Internal schematic diagram TO-3 1 2 Order code Marking Package Packaging 2ST5949 2ST5949 TO-3 tray www.st.com |
Numéro de pièce similaire - 2ST5949 |
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Description similaire - 2ST5949 |
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