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BU900TP Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce BU900TP
Description  NPN power TRILINTON
PDF  8 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BU900TP Fiches technique(HTML) 3 Page - STMicroelectronics

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BU900TP
Electrical characteristics
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2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IEBO
Emitter cut-off current
(IC = 0)
VEB = 8 V
100
µA
ICES
Collector cut-off current
(VBE = 0)
VCE = 370 V
100
µA
V(BR)CES
Collector-emitter
breakdown voltage
(VBE = 0)
IC = 50 mA
370
660
V
VCE(sat)
(1)
1.
Pulsed duration = 300 ms, duty cycle
≤1.5%
Collector-emitter
saturation voltage
IC = 2.5 A
_ IB = 1 mA
IC = 3 A
_ _
IB = 3 mA
4
4
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 3 A
_
IB = 3 mA
3.5
V
hFE
DC current gain
IC = 1 A
_
VCE = 5 V 7000
VF
Diode forward voltage
IC = 5 A
18
V
Es/b
(1)
Secondary breakdown
energy
IC = 4 A
L = 10 mH
80
mJ



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