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STPS1545CT Fiches technique(PDF) 2 Page - STMicroelectronics |
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STPS1545CT Fiches technique(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Symbol Parameter Value Unit Rth (j-c) Junction to case TO-220AB / D 2PAK Per diode Total 3.0 1.7 °C/W ISOWATT220AB Per diode Total 5.5 4.2 Rth (c) TO-220AB / D 2PAK Coupling 0.35 ISOWATT220AB 2.9 When the diodes 1 and 2 are used simultaneously: ∆ Tj (diode 1) = P (diode1)x Rth(j-c) (per diode) + P (diode 2) x Rth(c) THERMAL RESISTANCES Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25 °CVR =VRRM 100 µA Tj = 125 °C 5 15 mA VF * Forward voltage drop Tj = 125 °CIF = 7.5 A 0.5 0.57 V Tj = 25 °CIF = 15 A 0.84 Tj = 125 °CIF = 15 A 0.65 0.72 STATIC ELECTRICAL CHARACTERISTICS (Per diode) Pulse test : * tp = 380 µs, δ <2% To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.020 IF 2 (RMS) STPS1545CT/CF/CG 2/7 |
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