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ST6208CB3 Fiches technique(PDF) 76 Page - STMicroelectronics |
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ST6208CB3 Fiches technique(HTML) 76 Page - STMicroelectronics |
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76 / 104 page ![]() ST6208C/ST6209C/ST6210C/ST6220C 76/104 10.6 MEMORY CHARACTERISTICS Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified. 10.6.1 RAM and Hardware Registers 10.6.2 EPROM Program Memory Figure 55. EPROM Retention Time vs. Temperature Notes: 1. Minimum VDD supply voltage without losing data stored in RAM (in STOP mode or under RESET) or in hardware reg- isters (only in STOP mode). Guaranteed by construction, not tested in production. 2. Data based on reliability test results and monitored in production. For OTP devices, data retention and programmability must be guaranteed by a screening procedure. Refer to Application Note AN886. 3. The data retention time increases when the TA decreases, see Figure 55. Symbol Parameter Conditions Min Typ Max Unit VRM Data retention1) 0.7 V Symbol Parameter Conditions Min Typ Max Unit tret Data retention 2) TA=+55°C 3) 10 years -40 -30 -20 -10 0 102030 405060708090 100 110 120 Temperature [°C] 0.1 1 10 100 1000 10000 100000 Retention time [Years] 1 |
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