STP6NB80FP datasheet(1/6 Pages) STMICROELECTRONICS

No de pièce	STP6NB80FP

Description	N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP

PDF	6 Pages

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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STP6NB80

STP6NB80FP

N - CHANNEL 800V - 1.6

Ω - 5.7A - TO-220/TO-220FP

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 1.6

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs with

outstanding performances. The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

September 1998

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

ST P6NB80

STP6NB80F P

VDS

Drain-source Voltage (VGS = 0)

800

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

800

V

VGS

G ate-source Volt age

± 30

V

ID

Drain Current (continuous) at Tc =25

oC

5.7

5.7(*)

A

ID

Drain Current (continuous) at Tc = 100

oC3.6

2

A

IDM (

•)

Drain Current (pulsed)

22.8

A

Ptot

T otal Dissipation at Tc =25

oC

125

40

W

Derating F actor

1.0

0.32

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

4

V/ns

VISO

I nsulation W ithstand Voltage (DC)



2000

V

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction T emperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤5.76 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

(

*) Limited only maximum temperature allowed

TYPE

VDSS

RDS(on)

ID

ST P6NB80

ST P6NB80FP

800 V

<1.9

Ω

<1.9

Ω

5.7 A

1/6

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Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STB4NB80	52Kb / 6P	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET Jun-1998
	STP10NK80Z	458Kb / 11P	N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™ Power MOSFET Feb-2003
	STP3NB80	106Kb / 9P	N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP4NB80	354Kb / 9P	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET Sep-2001
	STP5NB80	107Kb / 9P	N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP5NB90	44Kb / 6P	N - CHANNEL 900V - 2.3 ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1998
	STP5NK80ZFP	378Kb / 10P	N-CHANNEL 800V - 1.9ohm - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH™ Power MOSFET Jul-2002
	STP7NB80	106Kb / 9P	N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET Apr-1999
	STP9NK80Z	336Kb / 11P	N-CHANNEL 800V -0.9ohm - 7.5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET 18-May-2005
	STB20NM60A-1	309Kb / 12P	N-CHANNEL 650V@Tjmax - 0.25 Ohm - 20A I짼PAK/TO-220/TO-220FP Mar-2004

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