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STB40NF10 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STB40NF10
Description  N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET
PDF  11 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB40NF10 Fiches technique(HTML) 3 Page - STMicroelectronics

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STP40NF10 - STB40NF10 - STB40NF10-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 50 V, ID = 20 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
28
ns
tr
Rise Time
63
ns
Qg
Total Gate Charge
VDD = 80V, ID =40A,VGS = 10V
60
80
nC
Qgs
Gate-Source Charge
10
nC
Qgd
Gate-Drain Charge
23
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD = 50 V, ID = 20 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
84
28
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
40
A
ISDM (2)
Source-drain Current (pulsed)
160
A
VSD (1)
Forward On Voltage
ISD = 40 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 40 A, di/dt = 100A/µs,
VDD = 25V, Tj = 150°C
(see test circuit, Figure 5)
114
456
8
ns
nC
A
Thermal Impedance
Safe Operating Area



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