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STP3NC90Z Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STP3NC90Z
Description  N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™ II MOSFET
PDF  11 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP3NC90Z Fiches technique(HTML) 3 Page - STMicroelectronics

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STP3NC90Z/FP/STB3NC90Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
∆VBV = αT (25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
Rise Time
VDD = 450 V, ID = 1.5 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
28
ns
tr
14
ns
Qg
Total Gate Charge
VDD = 720V, ID = 3A,
VGS = 10V
27
38
nC
Qgs
Gate-Source Charge
8
nC
Qgd
Gate-Drain Charge
10
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 720V, ID = 3 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
16
ns
tf
Fall Time
10
ns
tc
Cross-over Time
18
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
3.5
A
ISDM (2)
Source-drain Current (pulsed)
14
A
VSD (1)
Forward On Voltage
ISD = 3 A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 3 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
712
ns
Qrr
Reverse Recovery Charge
4450
µC
IRRM
Reverse Recovery Current
13
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
25
V
αT
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10-4/°C
Rz
Dynamic Resistance
ID = 50 mA
90
Ω



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