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PM6675AS Fiches technique(PDF) 42 Page - STMicroelectronics |
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PM6675AS Fiches technique(HTML) 42 Page - STMicroelectronics |
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42 / 48 page ![]() Application information PM6675AS 42/48 where RDSon is the drain-source on-resistance low-side switch. Consider the temperature effect and the worst case value in RDSon calculation (typically +0.4 %/°C). The accuracy of the valley current also depends on the offset of the internal comparator (±6 mV). The negative valley-current limit (if the device works in forced-PWM mode) is given by: Equation 47 8.1.7 All ceramic capacitors application Design of external feedback network depends on the output voltage ripple across the output capacitors ESR. If the ripple is great enough (at least 20 mV), the compensation network simply consist of a CINT capacitor. Figure 39. Integrative compensation The stability of the system depends firstly on the output capacitor zero frequency. It must be verified that: Equation 48 DSon NEG R mV 110 I = CFILT CINT RINT gm + - Vr=0.6 VSNS Ton One-shot generator VREF PWM Comparator + - COMP VOUT Integrator out out Zout SW C R 2 k f k f ⋅ π = ⋅ > |
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