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M54HC02K Fiches technique(PDF) 4 Page - STMicroelectronics |
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M54HC02K Fiches technique(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() M54HC02 4/8 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr =tf =6ns) CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) =CPD xVCC xfIN +ICC/4 (per gate) TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RT =ZOUT of pulse generator (typically 50Ω) Symbol Parameter Test Condition Value Unit VCC (V) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. tTLH tTHL Output Transition Time 2.0 30 75 95 110 ns 4.5 8 15 19 22 6.0 7 13 16 19 tPLH tPHL Propagation Delay Time 2.0 27 75 95 110 ns 4.5 9 15 19 22 6.0 8 13 16 19 Symbol Parameter Test Condition Value Unit VCC (V) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. CIN Input Capacitance 5.0 5 10 10 10 pF CPD Power Dissipation Capacitance (note 1) 5.0 21 pF |
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