STP24NF10 datasheet(1/6 Pages) STMICROELECTRONICS

No de pièce	STP24NF10

Description	N - CHANNEL 100V - 0.07ohm - 24A TO-220 LOW GATE CHARGE STripFET POWER MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

Logo

1 / 6 page

STP24NF10

N - CHANNEL 100V - 0.07

Ω - 24A TO-220

LOW GATE CHARGE STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.07

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This

MOSFET

series

realized

with

STMicroelectronics unique STripFET process has

specifically been designed to minimize input

capacitance and gate charge. It is therefore

suitable

as

primary

switch

in

advanced

high-efficiency, high-frequency isolated DC-DC

converters

for

Telecom

and

Computer

applications.

It

is

also

intended

for

any

applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

®

INTERNAL SCHEMATIC DIAGRAM

April 2000

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

100

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC24

A

ID

Drain Current (continuous) at Tc = 100

oC15

A

IDM(

•)

Drain Current (pulsed)

96

A

Ptot

T otal Dissipation at Tc =25

oC80

W

Derating Factor

0.53

W /

oC

dv/ dt(1 )

Peak Diode Recovery voltage slope

9

V/ns

EAS (2)

Single Pulse Avalanche Energy

75

mJ

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

( 2) starting Tj =25

oC, I

D =24A , VDD = 50V

(1) ISD

≤ 24 A, di/dt ≤ 300A/µs, V

DD

≤ V

(BR)DSS,Tj

≤ T

JMA

TYPE

VDSS

RDS(on )

ID

STP24NF10

100 V

< 0.077

Ω

24 A

1

2

3

TO-220

1/6

Numéro de pièce similaire - STP24NF10

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STP24NF10	421Kb / 14P	N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET 09-Aug-2006
VBsemi Electronics Co.,...	STP24NF10	939Kb / 7P	N-Channel 100-V (D-S) MOSFET
Inchange Semiconductor ...	STP24NF10	371Kb / 2P	isc N-Channel MOSFET Transistor

More results

Description similaire - STP24NF10

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STP20NE10	81Kb / 8P	N - CHANNEL 100V - 0.07ohm - 20A - TO-220 STripFET MOSFET Jul-1998
	STP35NF10	466Kb / 10P	N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET Apr-2003
	STP40NF10	479Kb / 11P	N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET Sep-2002
	STP40NF10L	272Kb / 8P	N-CHANNEL 100V - 0.028ohm - 40A TO-220 LOW GATE CHARGE STripFET POWER MOSFET Jun-2002
	STP80NF10	334Kb / 9P	N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET™ I POWER MOSFET Sep-2002
	IRF530	281Kb / 3P	N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET June 1988
	STP135N10	204Kb / 8P	N-CHANNEL 100V - 0.007 ohm - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET Jul-2003
	STB24NF10	421Kb / 14P	N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET 09-Aug-2006
	STP40NF10	238Kb / 12P	N-channel 100V - 0.025??- 50A TO-220 Low gate charge STripFET??II Power MOSFET 31-Jan-2007
	IRF540	311Kb / 8P	N-CHANNEL 100V - 0.055Ω - 22A TO-220 LOW GATE CHARGE STripFET™II POWER MOSFET Feb-2003

More results

STP24NF10 Fiches technique(PDF) 1 Page - STMicroelectronics

STP24NF10 Fiches technique(HTML) 1 Page - STMicroelectronics

Numéro de pièce similaire - STP24NF10

Description similaire - STP24NF10

Html Pages

1 2 3 4 5 6

Fiches technique Télécharger

Lien URL