USBLC6-4_08 datasheet(2/13 Pages) STMICROELECTRONICS

No de pièce	USBLC6-4

Description	Very low capacitance ESD protection

PDF	13 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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Characteristics

USBLC6-4

2/13

Characteristics

Table 1.

Absolute ratings

Symbol

Parameter

Value

Unit

VPP

Peak pulse voltage

IEC 61000-4-2 air discharge

IEC 61000-4-2 contact discharge

MIL STD883C-Method 3015-6

Tstg

Storage temperature range

-55 to +150

°C

Operating junction temperature range

-40 to +125

°C

Lead solder temperature (10 seconds duration)

260

°C

Table 2.

Electrical characteristics (Tamb = 25 °C)

Symbol

Parameter

Test Conditions

Value

Unit

Min.

Typ.

Max.

VRM

Reverse stand-off voltage

IRM

Leakage current

VRM = 5 V

150

VBR

Breakdown voltage between VBUS

and GND

IR = 1 mA

Forward voltage

IF = 10 mA

0.86

VCL

Clamping voltage

IPP = 1 A, 8/20 µs

Any I/O pin to GND

IPP = 5 A, 8/20 µs

Any I/O pin to GND

Ci/o-GND Capacitance between I/O and GND

VR = 1.65 V

ΔCi/o-GND

0.015

Ci/o-i/o

Capacitance between I/O

VR = 1.65 V

1.85

2.7

ΔCi/o-i/o

0.04

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