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STN7NF10 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STN7NF10
Description  N-CHANNEL 100V - 0.055 ohm - 5A SOT-223 LOW GATE CHARGE STripFET™ II POWER MOSFET
PDF  8 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STN7NF10 Fiches technique(HTML) 3 Page - STMicroelectronics

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STN7NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =50 V,ID =12A
RG = 4.7Ω VGS =10 V
(see test circuit, Figure 3)
58
ns
tr
Rise Time
45
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =80 V,ID =24A,
VGS =10 V
30
6
10
41
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD =50 V,ID =12 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
49
17
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
5
A
ISDM (1)
Source-drain Current (pulsed)
20
A
VSD (2)
Forward On Voltage
ISD = 5 A, VGS =0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100A/µs,
VDD =30 V,Tj = 150°C
(see test circuit, Figure 5)
100
375
7.5
ns
nC
A



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