STN749 datasheet(1/6 Pages) STMICROELECTRONICS

No de pièce	STN749

Description	MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

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STN749

MEDIUM CURRENT, HIGH PERFORMANCE,

LOW VOLTAGE PNP TRANSISTOR

s

VERY LOW COLLECTOR TO EMITTER

SATURATION VOLTAGE

s

DC CURRENT GAIN, hFE > 100

s

3 A CONTINUOUS COLLECTOR CURRENT

s

SOT-223 PLASTIC PACKAGE FOR

SURFACE MOUNTING CIRCUITS

s

AVAILABLE IN TAPE AND REEL PACKING

APPLICATIONS

s

POWER MANAGEMENT IN PORTABLE

EQUIPMENT

s

VOLTAGE REGULATION IN BIAS SUPPLY

CIRCUITS

s

SWITCHING REGULATOR IN BATTERY

CHARGER APPLICATIONS

s

HEAVY LOAD DRIVER

DESCRIPTION

The device is manufactured in low voltage PNP

Planar Technology by using a "Base Island"

layout.

The resulting Transistor shows exceptional high

gain

performance

coupled

with

very

low

saturation voltage.

INTERNAL SCHEMATIC DIAGRAM

March 2003

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IE = 0)

-35

V

VCEO

Collector-Emitter Voltage (IB = 0)

-25

V

VEBO

Emitter-Base Voltage (IC = 0)

-5

V

IC

Collector Current

-3

A

ICM

Collector Peak Current (tp < 5 ms)

-6

A

Ptot

Total Dissipation at Tamb = 25

o C

1.6

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

1

2

3

SOT-223

Ordering Code

Marking

STN749

N749

®

1/6

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